This university-industry collaboration research project seeks to understand the subsurface damage resulting from ultra-fine finishing processes in the manufacture of wide band-gap semiconductor substrates. This understanding will aid in identifying the processing conditions that can overcome subsurface damage problems in producing these substrates. Substrates of II-VI semiconductor materials including ZnSe, CdS and ZnO will be prepared by a variety of surface processing methods including ultra-precision machining and polishing. The resulting subsurface lattice disorder will be assessed with the use of ion beam channeling, cathodoluminescent, and scanning capacitance microscopy. Subsequent to surface characterization, epitaxial films will be grown on the substrates by molecular beam epitaxy, and will be used to do performance testing. The project will be conducted in collaboration with Eagle-Picher Research Laboratory, Los Alamos National Laboratory, and the National Institute of Standards and Technology. The project can lead to a fundamental understanding of subsurface damage in the ultra-fine finishing of semiconductor substrates, with significant practical benefits in the production of LEDs and lasers among others. A major strength of the project is the existence of strong partnerships with industry and government laboratories.
