WPCf 2 B J d | x MACNormal p 5 X ` h p x (# % '0* , .81 3 5@8 : < : } D 4 P T I. A. 1. a.(1)(a) i) a) T 0 * * . , US X ` h p x (# % '0* , .81 3 5@8 : < : } D 4 P 0 * * . , US , 3 ' 1 MACNormal Shur 9311033 The Department of Electrical Engineering at the University of Virginia will purchase Optical Instrumentation for Spectral Transmission and Reflection Measurements. The requested optical equipment will be used in conjunction with a new and unique measurement technique which accounts for optical interference in thin films and allows us to obtain much more accurate values of optical constants. This equipment will be used together with field effect characterization equipment which we already have. This will allow us, for the first time, to perform field effect and optical studies on the same samples of amorphous silicon and establish the nature and distribution of localized states in amorphous silicon as well as the changes in this distribution under voltage stress and external conditions. Such a study is very important for improving the stability of amorphous silicon Thin Film Transistors which determines the stability and quality of Active Matrix Liquid Crystal Displays widely used in modern computer equipment and consumer electronics. It is also important for understanding both unique material properties of amorphous silicon and the TFT device physics.