9422338 Mehregany A rapid thermal chemical vapor deposition (RTCVD) system will be purchased for MEMS Processing. RTCVD provides higher deposition rates for polysilicon, silicon dioxide and silicon nitride in comparison with low pressure chemical vapor deposition (LPCVD). As a result this proposal requests $50,000 in equipment funds to construct a rapid thermal chemical vapor deposition (RTCVC) system for MEMS processing. RTCVD provides higher deposition rates for polysilicon, silicon dioxide, and silicon nitride in comparison with low pressure chemical vapor deposition (LPCVD). As a result, single-wafer processing and deposition of thicker films become two important practical features of RTCVD. Both of these features are valuable for MEMS processing. The former enables rapid prototyping of ideas and the latter provides for enhanced device design flexibility. Additionally, the low thermal budget associated with RTCVD enables development of integrated MEMS processes in which micromachining is carried out on wafers with electronics, fabricated prior to or mixed in with the micromachining steps. ***