This joint research program between Dr. Jacques Pankove, University of Colorado at Boulder, and Dr. Han Daxing, Institute of Physics, Chinese Academy of Sciences, Beijing, is designed to investigate light-induced degradation of hydrogenated amorphous silicon, a phenomemon which scientists believe is the major stumbling block to further development of hydrogenated amorphous silicon solar cells. Such research is important in the continuing search for improved semiconductor technology. In this project, Dr. Han will measure photoconductivity spectra after various stages of light soaking and annealing. The same samples will then be tested at the University of Colorado to determine the luminescence characteristics. Results will be discussed during reciprocal visits. This will enable the two scientists to carry out coordinated experiments on the same samples subjected to similar treatment, an approach which will be carried out for the first time in these experiments. This project takes advantage of superior facilities and capabilities on the part of both scientists and is an international collaboration of great promise to both countries.
