Traditional methods for characterizing defects in semiconductors are not entirely adequate at the VLSI/ULSI level of integration. SIMS coupled with defect decoration by a SIMS-sensitive element is proposed as a complementary method. The objectives of this Phase I project are: (1) to determine how well SIMS can detect oxygen precipitates, dislocation loops, and stacking faults in silicon when a SIMS-sensitive element is used to decorate the defects; and (2) to determine the quantitative relationship between the SIMS measurement of the decorative element and the defect density and size. The primary decorative element to be studied is fluorine.
