This grant addresses the technical and policy barriers confronted by the semiconductor industry in creating next generation memory devices. The objectives of the grant are to: (I) enable high-volume manufacturing of atomically-precise, defect-free patterns made from synthetic DNA, (II) self-report defects using an in-line optical technique to monitor the quality control of patterns during high-volume production, and (III) create a policy framework that guides public-private collaborations in scalable nanomanufacturing.

If successful, solving these industrial challenges will help: (A) validate molecular self-assembly as a cost-effective manufacturing process for scalable nanomanufacturing, (B) establish novel process techniques for scalable nanomanufacturing, (C) overcome critical roadblocks in semiconductor device fabrication at the nanoscale, and (D) address societal implications of the large-scale production and use of DNA as an engineered nanomaterial. The research will also advance the discovery, innovation, and overall knowledge-based prosperity of science and engineering in Idaho, an EPSCoR State.

Project Start
Project End
Budget Start
2014-03-01
Budget End
2019-02-28
Support Year
Fiscal Year
2013
Total Cost
$1,499,918
Indirect Cost
Name
Boise State University
Department
Type
DUNS #
City
Boise
State
ID
Country
United States
Zip Code
83725