Continued improvements in integrated circuit (IC) performance, circuit density, and production costs are possible as a result of significant advances in VLSI and optical lithography. The research program, will capitalize on these developments and develop innovative and timely technology used in manufacturing semiconductor components, in particular the next generation of 16 Mbit and 64 Mbit DRAM chips. This will be accomplished by utilizing new, deep UV excimer laser steppers and taking advantage of powerful and cost effective advanced computer-aided design (CAD) tools for simulation in the overall microelectronics product-developed process. In the first phase of this project, the manufacturing yield will be improved by modifying mask information based upon simulation and fabrication of structures using I-line wavelength verification. Such a feedback process will allow "dynamic" modification of the layout "design rules" in a VLSI system design, resulting in improved manufacturing yield when compared with presently available "static" design rules. A second, concurrent phase of the project seeks to implement and test simulation models based on advanced KrF excimer laser sources needed for the development of prototype 64 Mbit DRAM products. Interactive engineering tests will be performed at the university and in industry to define the optimum operating range and control methodology for excimer laser-based photolithographic light sources. The work will allow the production of integrated circuits of increased density, complexity and reliability.
