The following pieces of optical characterization equipment for semiconductor materials and device research will be purchased: 1) an argon ion laser, 2) a high-speed, long-wavelength, infrared detector, 3) an electro-optic modulator and driver, 4) a low-temperature cryogenic research dewar, 5) a high-frequency lock-in amplifier, and 6) a data acquisition computer. This equipment will be used in four different project areas which have a common need for the contactless, non-destructive, evaluation semiconductor carrier lifetime and electronic defect properties. The project areas are: 1) strained layer epitaxy of germanium-silicon alloys by rapid thermal epitaxy, 2) molecular epitaxy of group III-V compound semiconductors, 3) molecular beam epitaxy of mercury cadmium telluride, and 4) silicon-based integrated micro-sensors and micro-actuators.
