We propose to study the design, fabrication, and characterization of the 8-12 u long wavelength infrared (LWIR) sensing element of image sensor cell, which is composed of one GaAs/AlGaAs multiple quantum well (MQW) photoconductor and three modulation doped field effect transistor (MODFET) switches, controlling the cell's charging, output, and reset, respectively. The critical issue is how to make the mesa structures of the MOW photoconductor and the planar structures of the MODFET compatible. BAsed on our new invention of the integration of MQW photocondutor and FET structures, the patent of which is being applied, the design and fabrication procedure of a monolithically integrated image sensor cell is proposed. The success of the project is crucial for the development of the monolithically integrated GaAs/AlGaAs multiple quantum well imager, which is a two dimensional focal plane array of sensor cells combined with the signal readout circuits. The development of the monolithic long wavelength IR multiple quantum well image sensor represents an important goal, not only in the thermal imaging technology, but also int he innovative application of superlattices.
