9407078 Smith We propose to develop a capability for placing lithographic features at assigned position to better than 1nm, using both scanning-electron-beam lithography (SEBL) and focused-ion-beam lithography (FIBL). This will be achieved by means of spatial-phase-locking, a technique recently invented at MIT. Based on our recent research, in which sub-1 nm repeatability of spatial-phase-locking was demonstrated, we firmly believe we can develop a convenient, generally applicable, and readily transferrable technology for sub-1 nm feature placement precision within the 3 years proposed. We also believe that the proposed research will lead to a significant reduction in the cost of e-beam and ion-beam lithography systems because the positioning precision will rely upon continuous feedback and computer control rather than expensive, secondary-referencing electromechanical systems. Such a cost reduction could, in turn, make nanotechnology more widely available to the research community, and thereby expand the impact of this technology. ***