The proposed research is to investigate resonant tunneling injection lasers made of GaAs- and InP-based III-V semiconductors emitting at various wavelengths from visible to near IR region. The PI has recently made the resonant tunneling lasers that showed for the first time direct evidence for achieving population inversion through the tunneling injection mechanism at 77K. The proposed work is to optimize the device design to maximize the tunneling current at room temperature, and to demonstrate a high modulation frequency of this device up to 90GHz, compared to 30GHz for the conventional quantum well lasers.
