The optical characteristics of the halogen and metal compounds are being investigated--such as SiF;i4, SiH;i4, CF;i4, AsF;i3, AsH;i3, XeF;i2, HF, F;i2, CI;i2, SF;i6, Ga;i2H;i6, As(CH;i3);i3, and As(C;i2H;i5);i3--which are used in the photoetching and photodeposition processes of microelectronics fabrication. This study measures the photo adsorption, photonionization, photodissociation, and laser-induced fluorescence cross sections of the halogen and metal-halide compounds mentioned above. Intense light sources, such as synchrotron radiation, excimer lasers, YAG laser, dye lasers, and condensed-discharge lamps, are used to study the optical properties of the halogen and metal compounds in great detail. The optical spectroscopic approach is used to investigate enhanced surface reactions and light emission, including chemiluminescence using lasers.
