This work focusses on the growth and processing of aluminum nitride (AlN), a technologically important III-V compound, by metalorganic chemical vapor deposition (MOCVD). The adsorption, decomposition, and thermal stability of a series of alkylaluminum and alkylsilylaluminum compounds are investigated on selected substrates. The derivatized substrates are subsequently reacted with a nitridant gas (ammonia or hydrazine) to promote precursor formation; the precurser is then reacted further to form two-dimensional oligomers of AlN. Energetics and intermediates at each stage of the deposition process are probed with both high-pressure and ultrahigh-vacuum surface analysis techniques. Objectives include the requirements for ordered growth at low substrates temperature, use of modified substrates as templates for site-selective adsorption, more facile nitridant gases, and the advantages of using alkylsilyl leaving groups in MOCVD. Aluminum nitride (AlN) possess a wide Fermic band gap, high thermal conductivity, high refractivity, chemical inertness, and a good thermal match to silicon; these properties make it an ideal material for electronic packaging. It also has application in passivation layers, dielectric layers, piezoelectric films, and nonelectronic applications. This study of improved deposition technology for AlN could also have applicability to other materials desired in thin-film form.//
