ABSTRACT -- CTS-9311893 Williams The application of a transverse magnetic field to Czochralski crystal growth of semiconductors has been found to improve the distribution of dopants and the crystal quality itself. However, optimal results are impossible to obtain without an understanding of the melt flow, which has proved elusive. The PI proposes to formulate the initial development of a three-dimensional spectral method numerical model to examine the melt growth for moderate to high magnetic field strengths. The planning activities will consist of an in-depth literature review, and a close examination of the governing equations, boundary conditions, and simplifications. Care will be taken to fully explore the aims and motivations of the larger numerical study, and to initiate and maintain contact with experimentalist in the field. Initial numerical studies will be performed to promote familiarity with the computational and graphical techniques.
