Abstract Zhao 9512152 This proposal is for the development and testing of an inductively-coupled plasma (ICP) etching and deposition system for advanced material and device processing. A class-100 clean room will be used in which etching of stable semiconductors such as 6H-SiC and GaN among others will be carried out. A major goal of this research is to provide feedback and suggestions to the industrial partner regarding possible improved design for final commercialization of the ICP system. Efforts will include the setting up of a prototype ICP system and evaluate its etching capabilities and its comparison with other available systems such as RIE and ECR.
