Prof. Peter C. Searson will develop an experimental and theoretical framework to describe the electrochemical deposition of copper and gold on silicon, and to characterize the microstructure and electrical properties of the junctions. A combination of techniques will be used, primarily electrochemical analysis, electrochemical impedance spectroscopy, in situ microwave reflectivity, scanning probe microscopy, electron microscopy, and x-ray diffraction. The project will result in the determination of the mechanism of the charge transfer at the electrolyte-semiconductor interface and of the metal deposition; the kinetics of the ion reduction at the doped semiconductor surface, and of the metal nucleation and growth. Insight will be gained on the relationship between interfacial chemistry and materials properties (microstructure, morphology, and electrical properties). A scientific basis will be provided for the deposition of high quality, uniform metal films on semiconductor surfaces, with controlled Schottky or ohmic characteristics.
