9407089 This renewal award is made in the Advanced Materials and Processing Program in support of the research of Professors Mark Hampden-Smith and Toivo Kodas. Support is provided by the Divisions of Chemistry, Materials Research, and Chemical and Transport Systems. Two fundamental problems in metal chemical vapor deposition (CVD) will be addressed: (1) methods of providing reproducible delivery for precursors with low volatility, and (2) developing methods to control selective metal deposition. Low volatility silver(I) precursors will be prepared and their CVD studied using a aerosol delivery system which will allow studies of reaction kinetics in partial pressure ranges that cannot be achieved with conventional thermal delivery systems. Studies of surface chemistry will be aimed at understanding how copper(I) precursor molecules react with surface functional groups on silica, alumina, titania, and silicon and aluminum nitride surfaces. These interactions will be characterized by FTIR, XPS and temperature-programmed desorption-MS. Surfaces will be modified to control the selective deposition of copper and silver metals. This research is relevant to semiconductor technology. Copper will likely replace aluminum as an interconnect for high resolution chips. This research will provide the fundamental background for electromigration-resistant metal deposition.
