In this project funded by the Advanced Materials Chemistry Program in the Special Projects Office of the Chemistry Division, Gordon will conduct fundamental research on a low-temperature chemical vapor deposition (CVD) process for early transition metals such as titanium, zirconium, or hafnium. The approach will be to synthesize novel precursor compounds containing hydrogenated aromatic ligands which should decompose cleanly into metal hydride films and very stable aromatic byproduct vapors. The metal hydride films would then be dissociated into the metal and hydrogen by heating to higher temperatures. The deposited metals will be fully characterized for composition and structure as well as for thickness, electrical resistance, surface morphology, and step coverage using various spectroscopic and microscopic tools. Since no low-temperature CVD processes are currently known for any of the early transition metals, successful discovery and development of a low-temperature CVD process for deposition of these metals should have an important impact on CVD of semiconductors and non-metals. Various electronic and optical applications, such as solar cells, smart windows, flat-panel displays, corrosion-resistant coatings, and other thin-film applications will be affected.

Agency
National Science Foundation (NSF)
Institute
Division of Chemistry (CHE)
Application #
9510245
Program Officer
Seymour Lapporte
Project Start
Project End
Budget Start
1995-08-01
Budget End
1999-07-31
Support Year
Fiscal Year
1995
Total Cost
$434,000
Indirect Cost
Name
Harvard University
Department
Type
DUNS #
City
Cambridge
State
MA
Country
United States
Zip Code
02138