This Equipment Grant is provided to build a facility for the synthesis of thin films of new oxide superconductors. Two major problems in the synthesis of thin films are: the ability to control the stoichiometry of the film, and the ability to incorporate enough oxygen. So far thin films have been synthesized by using a large oxygen background pressure in conventional e-beam and sputtering chambers. All these films require a high temperature oxygen anneal, hence, making them less practical for applications requiring compatibility with other thin film devices. This thin film facility is designed to provide a large rate of oxygen arrival at the substrate, preferably in an atomic state, while maintaining the metal sources and their rate monitors at low pressures. This makes the deposition rates more stable and reproducible, and extends the lifetime of the sources. This facility will be used to produce high quality films at the lowest process temperatures, and the films will be used for tunneling, transport measurements and devices.
