The research combines modelling and experiment for studying metallorganic chemical vapor deposition of gallium aluminum arsenide. The models will utilize advances made under the previous grant, DMR-8351249. The following chemical vapor deposition reactors will be modelled: 1) three dimensional models of horizontal reactors, 2) optimization of the shape of vertical reactors, 3) optimal operating conditions and shapes for rotating disk flow reactors, 4) time dependent simulations of growth of superlattice structures, 5) three dimensional flow structures in vertical reactors. The modelling will be coupled with the experimental research which includes growth of the materials in existing reaction chambers for processing of integrated electronic materials, determination of gas phase and surface diffusion chemical kinetics using molecular beam sampled mass spectrometer and thermogravimetric measurements, and measurement of the rate and uniformity of deposition. The research will allow improvement in design of reactors used to process integrated electronics, improved control of the operation of the reactors, assurance that the components will be uniform (thereby increasing yield and quality).
