The research uses different light scattering techniques to characterize semiconductor heterostructure interfaces and to study the physical properties of these interfaces. Raman scattering by optical and acoustic phonons will be used to investigate the interface morphology. Light scattering by electrons in quantum wells will be used to study the fundamental electronic property of the interface, i.e., the lineup of the energy bands of the two heterostructure materials. The experimental effort focuses on understanding and improving epitaxial growth procedures, with special emphasis on novel systems such as strained layer superlattices and amorphous multi layers grown by plasma enhanced vapor deposition.
