The goal of the investigation is to study the interdiffusion and interface reactions in semiconductor materials, particularly metal-semiconductor interfaces. The emphasis in ongoing new insight into the atomic behavior associated with such reactions to include crystallization, grain growth, and dislocation behavior. The primary analytical technique is dynamic, in-situ high resolution electron microscopy, and x-ray diffraction, Auger electron spectroscopy, Rutherford backscattering will provide complementary information. The research concentrates upon both the thorough understanding of the reactions of metals with semiconductors as well as the reactions within the semiconductors as the reaction progresses from the very beginning of the formation of the interface.
