The objective of the research is to use reflection high energy electron diffraction to study the role of defects in epitaxial growth of compound semiconductors, for example, gallium arsenide. The primary focus is on the effects of surface structured and morphology on the growth process. The program includes studies of stability of steps and kinks on vicinal surfaces, relaxation of strain in lattice mismatched films, effects of impurities on surface structure and propagation of steps, and continued improvement of the reflection high energy electron diffraction process.
