This basic research project utilizes the capabilities unique to thermal atomic beam scattering(ABS)--high sensitivity to low coverage impurities and defects, real time measurement--to obtain detailed structural information for complex surface ordered phases without surface damage or charging effects allowing the study of kinetic, dynamical and structural properties of epitaxy. The research combines the ABS technique with other advanced surface science diagnostic methods to characterize both the growth mode, and the structural and chemical details of epitaxial crystal growth, layer by layer. %%% This research is expected to provide deeper fundamental understanding of epitaxial crystal growth at the atomic level. From an application point of view, understanding the details of crystal growth at this level is particularly helpful to advanced semiconductor device design and fabrication. The results will be of importance in a general way to the technology of large scale, high speed integrated electronic circuits.
