We plan to use a powerful combination of technique - High- Resolution LEED, scanning tunneling microscope (STM) and diffuse light scattering (DLS) to study the kinetics of interfacial processes from the atomic to the sub-micron scale. Included will be the growth, morphology and kinetic roughening transition of metal films on metals and of metal films on semiconductors from sub-monolayer to many layers thick. The goal is to better understand and to control the interfacial processes at the atomic level.
