9311913 Hahn The technique of sensitive optical detection of nuclear magnetic resonance (ODNMR) in semiconductors will be applied to study the properties of gallium arsenide heterostructure and quantum wells. ODNMR measurements will be made of electric fields, Knight shifts, doped constituents, and impurities. A new pulsed and double resonance ODNMR technique will be developed and applied to GaAs heterostructures in order to improve the detection sensitivity and versatility beyond conventional cw ODNMR techniques. The research will focus on the study of spin-spin coupling between photo-induced GaAs surface spin polarization and external spin systems. %%% This research project will develop new techniques involving optical spectroscopy techniques and radio-frequency nuclear magnetic resonance spectroscopy techniques. The relatively weak interaction between a nucleus and a radio-frequency signal is amplified and detected by optical or laser spectroscopy methods. These techniques will be applied to surface atoms on semiconductors. The objective to detect a transfer of magnetism from electrons in the semiconductors to non-semiconductor atoms residing on the semiconductor surface. The results will be of fundamental interest and will provide unique information of potential application in semiconductor technology. ***
