9312422 Morkoc Fundamental materials science and engineering issues of thin dielectric films will be addressed using in situ growth and diagnostics apparatus which exploits the advantages of both chemical vapor deposition and molecular beam epitaxy; metal- insulator-semiconductor structures based on group III-V GaAs and InP semiconductors will be investigated. Due to intrinsically better transport properties of III-V semiconductors, advances in the speed and power performance of microelectronic devices/circuits are anticipated from this study. One of the likely beneficiaries is low-power consumption digital electronics such as mobile communication systems. Moreover, this project, if successful, can provide an alternative path to further size reduction of Si devices for enhanced performance. %%% To date, semiconductors other than silicon have resisted implementation into the class of transistors, known as the metal oxide field effect transistor, that has been responsible for the commercial electronics revolution. Using modern materials-growth and in situ surface science diagnostic techniques, dielectrics and semiconductors with intrinsically higher potential (than silicon) for high speed field effect transistor applications will be studied. If successful, the project will have considerable beneficial impact on digital electronics systems such as wireless personal mobile communication systems; telecommunications, in general; information processing; and computing. ***
