9501859 Gibbs A combination of photoluminscence, level anticrossing, Optically Detected Magnetic Resonance (ODMR), and Raman scattering techniques will be used to provide a non-invasive study of semiconductor interfaces in technologically important heterostructures. The studies will be conducted on type II superlattices of gallium-arsenide/aluminium-arsenide as a function of growth parameters (growth interruption times, substrate temperature, growth rates, etc.) and growth techniques (conventional molecular-beam-epitaxy, migration enhanced epitaxy, and alternate molecular-beam-epitaxy). The results will elucidate the problem related to the electronic structures at gallium-arsenide-aluminium-arsenide interfaces. Interfaces play an essential and often poorly quantified role in many electronic and optoelectronic devices, this work, done in collaboration with scientists from the Ioffe Physico-Technical Institute, will provide new experimental information and theoretical interpretation. The results will have significant impact on optical and optoelectronic technologies. %%% Interfaces play an essential and often poorly quantified role in many electronic devices, this research will provide new experimental information and theoretical interpretation. The project will make use of unique combinations of non invasive techniques such as photoluminescence, level anti crossing, optically detected magnetic resonance and resonant Raman scattering, to study the process of ligh emission at gallium-arsenide/aluminium-arsenide semiconductor interfaces as a function of growth parameters and growth techniques. The results will have significant impact on optical and optoelectronic technologies. ****
