9704576 Stringfellow This project addresses fundamental research issues in the growth of III-V materials by metallo-organic chemical vapor deposition(MOCVD), in-situ and ex-situ atomic-scale characterization of the MOCVD growth process, with the scientific goal to understand the basic chemical and physical processes and the fundamental mechanism of ordering during crystal growth by MOCVD. The approach combines surface science spectroscopic and microscopic techniques to measure structure, chemistry, and surface processes within a state-of-the-art MOCVD reactor. The project emphasizes relating surface features such as reconstruction and steps to ordering. %%% The project addresses forefront research issues in a topical area of materials science having high technological relevance to microelectronics and photonics. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic/photonic devices and integrated circuitry, in general. Additionally, the fundamental knowledge and understanding gained from the research is expected to contribute to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***

Agency
National Science Foundation (NSF)
Institute
Division of Materials Research (DMR)
Application #
9704576
Program Officer
LaVerne D. Hess
Project Start
Project End
Budget Start
1997-06-01
Budget End
2001-05-31
Support Year
Fiscal Year
1997
Total Cost
$310,742
Indirect Cost
Name
University of Utah
Department
Type
DUNS #
City
Salt Lake City
State
UT
Country
United States
Zip Code
84112