9804719 Hicks The objective of this University/Industry collaborative GOALI project is to identify fundamental MOCVD process chemistry crucial to greater understanding and subsequent development of a robust manufacturing technology capable of producing "defect-free" compound semiconductor layers with sharp interfaces and precise dopant profiles. Research will be undertaken to determine the effects of strain and doping on the physics and chemistry of InGaAs/GaAs and InGaP/GaAs (001) surfaces. In addition, alternative precursors will be studied for low-temperature growth and doping of these materials. Surface structures produced by MOCVD will be characterized in situ by infrared, x-ray photoemission and thermal desorption spectroscopies, and by scanning tunneling microscopy. Bulk properties of films will be characterized by triple-axis x-ray diffraction, electron microscopy, and Hall analysis. New deposition processes that are developed will be further examined and tested for fabrication of heterojunction bipolar transistors (HBTs). The epitaxial layers will be processed into devices by industry partner, Rockwell, and then tested to compare their performance relative to commercial HBT products. The project is co-supported by the DMR Electronic Materials and Solid State Chemistry Programs, the Office of Naval Research, and the MPS OMA(Office of Multidisciplinary Activities). %%% The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level to new aspects of electronic/photonic devices. Experimental tools are now available to allow atomic level observation of elementary surface processes which when better understood allow advances in fundamental science and technology. The basic knowledge and understanding gained from the research is expected to contribute to improving the performance and stability of advance d devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. Students and postdoctoral scholars working on this project will obtain valuable experience processing and testing devices at the facilities of industrial partners. ***

Agency
National Science Foundation (NSF)
Institute
Division of Materials Research (DMR)
Application #
9804719
Program Officer
LaVerne D. Hess
Project Start
Project End
Budget Start
1998-06-01
Budget End
2001-05-31
Support Year
Fiscal Year
1998
Total Cost
$223,042
Indirect Cost
Name
University of California Los Angeles
Department
Type
DUNS #
City
Los Angeles
State
CA
Country
United States
Zip Code
90095