This supports the 8th International Symposium on High Dielectric Constant and other Dielectric Materials for Nanoelectronics and Photonics to be held as part of 218th Meeting of The Electrochemical Society, in Las Vegas, Nevada during October 10-15, 2010. More specifically, the funds will be utilized for partial support of the travel expenses and registration support for several junior faculty members and several deserving graduate/undergraduate students.
. The symposium addressed the fundamental science and recent technologies of advanced gate stacks for complementary metal-oxide-semiconductor (CMOS) and memory applications in sub-32 nm feature size integrated circuits. In addition, devices with high-k on new substrate materials like Graphene and other higher mobility substrates was also presented by the world experts. The subjects covered in this symposium were High Mobility Substrates; High k Materials: Hf-Based and La-Based and Future Generation Higher-k Materials; Nano-Crystal Embedded Gate Insulator; Metal Gate Electrode Materials: Work Function Tuning; Novel Metal Electrodes. Deposition Techniques: Deposition process: e.g. precursor interactions, low temperature processing, non planar substrates, surface sensitivity, sputter effects, intermixing; Bulk Material Properties: Thermal Stability of New Materials; Material Interactions; Moisture sensitivity; Flat-Band Voltage Issues and Control: Dipoles at High-k/SiO2 and High-k/Metal Interfaces; Dipole Formation Models; Role of Oxygen Vacancies; Schottky Barrier Modelling. Interfaces: Si/SiO2, SiO2/High-k and High-k/Metal Interfaces; Interface Passiviation. Gate Stack Reliability: Defect Generation Mechanisms and Models; New Reliability Testing Techniques; Electrical, Chemical, and Physical Characterization: Diverse Electron Microscope, X-Ray, and AFM Characterization; Novel Electrical Characterization Techniques. Novel Applications: Carbon Nanotubes; Nanowire Transistors; Use of High-k Nanosheets; Organic FET and TFT with High-k Dielectrics; New Transistor Concepts, Structures, and Configurations. High-k and Diverse Insulators for Photonics: Oxides and Insulators for Active Layers, Passivation, Photon Capture, and Anti-Reflection Coating in Solar Cells, Photo-Transistors, Lasers, and LEDs; High-k Processing/Manufacturing: Surface preparations, cleaning, etchability, etc. of high-k materials. The funding was used towards the travel grant for 7 graduate students from all over the world and partial support for the PI to attend the Symposium. This gave an opportunity to the graduate students to present their papers, exchnged ideas among themselves and with the world experts on various research topics that were discussed in the symposium. The students received a free conference proceedings. Intellectual Merit: Exchange of research ideas among the experts and the graduate students. Broader Impact: Allowed graduate students including two female students to attend the conference.
