Goal: This will be an international symposium on mutlifunctional devcies and multiferroic materials.
Intellectual Merit:
The ISIF gathers many scientists and engineers from academia, national laboratories, and industries worldwide, enabling the direct exchange of information and discussions about the most important and actual topics relevant to their work. Due to the emergence of novel materials with multifunctionalities, and the significant progress made in recent years on new memory technologies, ISIF coverage has now been expanded to include the science and technology of many multifunctional materials, thus providing a new vision of the field of integrated functionalities.
Broader Impact:
Most of the distinguished invited (over 120) and plenary (5) speakers, have already confirmed their participation, ensuring representation from the Americas, Europe, and Asia. This proposal will enable the ISIF organizers to support attendance by at least 10 graduate students for the full length of the symposium. The students will be able to attend all conferences, present their research in poster sessions, visit the technical exhibit, and interact with all other participants. In addition several tutorials by specialists will be offered free-of-charge. The unique educational opportunities offered by this symposium will enhance the preparation of participating students, and their participation will also in turn enrich ISIF by fostering interest by the next generation of scientists and engineers who will advance the crucial research areas which are central to the emerging field of multifunctional materials and technology.
The ISIF witnessed over 250 researchers and engineers from academia, national laboratories, and industries, from 23 countries having discussion on the functional aspects of material integration for the advanced electronic devices. It had focused on fundamental and applied science of ferroelectrics, multiferroics, spintronics, and other inorganic materials for a number of electronic applications. There were 9 tutorials, 6 plenary talks and 5 parallel sessions covering the theoretical and experimental functional aspects of the materials for integration. This was the first symposium held under the title "International Symposium on Integrated Functionalities" (ISIF) from the previous meeting under the title "International Symposium on Integrated Ferroelectrics (ISIF). According to several feedbacks from attendees, the meeting was a great success in terms of the participation as well as meeting attendance for all sessions. It had witnessed a 4 fold attendance in the participation compared to the last year meeting in Colorado Springs. Additionally, it had participants from companies, academia, and national laboratories for various sessions which are classified into the following sessions; Ferroelectric Materials: Theory & Experiments Multiferroics and Magnetoelectrics: Theory & Experiments Nanoscale Ferroelectrics and 3-D Geometries for High Density Memories Non-Volatile Memories (RRAMs, MRAMs, FeRAMs, PCMs) Tunable Dielectrics for RF Applications and Devices High-K Dielectrics for Nanoscale Logic and DRAM Devices Piezoelectrics and Opto-Electrics for Sensors, Actuators, & Transducers, Ferroelectric Polymers, Composites and Liquid Crystals Energy Harvesting, Ferroelectric Photovoltaics 10. Ferroelectrics and Inorganics in Medicines and Health Care 11. Ferroelectrics and Spintronics, Theory & Experiments 12. Materials for Electrocaloric Coolers. These sessions considered materials integration, and design & fabrication of advanced devices and provided a new vision for science & technology of what can be defined as the field of integrated functionalities.
