A revolutionary new device concept that could enable the transformation of vacuum microelectronics from single charge carrier to bipolar devices (i.e., positive and negative charge) is proposed. This transformation is achieved by creating and modulating both ions and electrons simultaneously in a single vacuum microelectronic device (VMD) and has recently been demonstrated by RTI International and Duke University. This achievement represents the first demonstration of bipolar operation in a VMD, and the researchers believe the EArly-concept Grants for Exploratory Research (EAGER) Program provides an ideal mechanism for exploratory study of this new device concept, gaining a basic understanding of the new device operation and its ultimate potential in comparison to other electron devices. These bipolar vacuum microelectronic devices (BVMDs) have only recently been demonstrated for the first time, and thus they are at such an early stage of development that they do not fit within either existing or pending research programs. However, BMVDs represent a potentially transformative paradigm for electron devices. If this proposed EAGER program is successful, it could lead to entirely new fields of applications for VMDs in similar ways that CMOS technology transformed solid-state electronics.
The BVMD operation provides the equivalent of a field configurable bipolar junction transistor with all the advantages of VMDs with respect to operating temperature, radiation hardness, and high power/frequency capabilities. This proposal will focus first on developing a figure of merit that relates BVMDs to VMD and solid-state devices, followed by a detailed investigation of device operation across different pressure, temperature, and operational modes. The device model will be developed based on the COMSOL simulation platform, enabling detailed analysis of both electron and ion flux in the device as functions of various operating conditions (e.g., pressure, power, frequency). The simulations will be used to determine operational figures of merit and to aid in the design, development, and testing of next-generation BVMD devices. The successful research will enable both a better understanding of the device physics behind BVMDs and the ability to assess their ultimate potential.
