In this research, investigations into the growth of compound semiconductors for optoelectronic device applications will be undertaken. Initial efforts have focused on design and construction of a crystal growth facility. The primary first year funding of this NSF award will support a graduate research assistant for 9 months and a technical support person for 11 months, part time. Additional matching funds are currently under procurement. Within this first year, we expect to obtain high purity GaAs and AlGaAs materials of exceptional uniformity over a 3" substrate. Device structures for new lasers and other optoelectronic components will be fabricated and tested at CHTM. Students will be trained in the art of MOCVD and experiments directed at new materials to extend the wavelength range of optoelectronic components.
