Since the larger energy gap of (A1(x)Ga(1-x))(y)In(1-y)P has the potential for larger conduction band discontinuity and can give insulator behavior, research is proposed to demonstrate MODFET's and inversion mode MISFET's utilizing layers of (A1(x)Ga(1-x))(y)In1-yP on GaAs. This work will begin by modifying an existing OMCVD reactor to allow growth of the GaAs-(A1(x)Ga(1-x))(y)In(1-y)P heterojunction. Growth studies will include impurity incorporation and characterization of the electrical properties at various growth temperatures and III-V ratios in the input gas stream. Measurements will be made to characterize the (A1(x)Ga(1-x))(y)In(1-y)P layers and the GaAs- (A1(x)Ga(1-x))(y)In(1-y)P heterojunction interface. High resistivity (A1(x)Ga(1-x))(y)In(1-y)P layers on GaAs will be evaluated and the fabrication technology will be investigated to permit the fabrication and evaluation of MODFET and MISFET devices. Possible configurations for complementary MIS circuits and three-dimensional structures based on GaAs-(A1(x)Ga(1-x))(y)In(1-y)P heterojunctions will be investigated.
