The objective of the proposed research is characterization of ultrathin (<150A) silicon nitride and oxynitride insulators formed by high dosage, low energy (<5 keV) implantation of nitrogen or nitrogen and oxygen into single crystal silicon. Samples will be evaluated with measurements of junction capacitance and conductance (as functions of voltage and frequency), current vs. voltage, ellipsometry, Auger electron spectroscopy (AES), accelerated life testing, and electrical stressing and breakdown. Use of a temporary mercury contact will permit evaluation of the insulator alone, including variations of implantation and annealing conditions; and evaluation of films with various metals as gate contacts. Computer controlled measurements will permit extensive data acquisition and analysis.
