The objective of this research program is to theoretically investigate the role of transverse effects in semiconductor laser systems. It is well known, for example, the broad area lasers such as semiconductor lasers are able to support many transverse modes which can result in mode hopping as well as spatial and temporal instabilities unless such techniques as optical and carrier confinement are employed to minimize these difficulties. The study of semiconductor lasers requires models different from the traditional two-level atom formulation to describe complicated band structure, injected carrier densities, background dispersive effects, and the small geometries of the laser devices. Nevertheless, the semiconductor laser dynamics show remarkable similarities to the predictions of the simpler models. Because of this and of the existing numbers of semiconductor lasers and new systems on the horizon, an appropriate first step is to ask how an existing model can serve as a description. Second, how can the theoretical requirements of semiconductor laser devices be combined with the existing structure of the Maxwell-Bloch configuration to determine an appropriate set to equations for coupling the field and active medium? Third, design an experiment to demonstrate theoretical results in the spirit that theory guides, experiment decides. The third objective will be done in a joint collaboration.
