ZnSe/GaAs heterojunctions and multiple quantum wells will be fabricated by the relatively unexplored technique of chemical beam epitaxy. Controlled substitutional doping of each material system will be addressed. Special growth conditions will be determined to grow each semiconductor layer, having optimized material quality, simultaneously. The proposed research equipment is crucial to identify proper growth processes necessary for fabrication of stoichiometric layers. Gas flow ratios for the various atomic species versus temperature will determine the layer quality, but will also affect possible interfacial compound formation or the presence of interface state densities. An in situ analysis technique, such as Auger electron spectroscopy, can give an initial clue to what relative amounts of each specie are present at the surface of each layer. Rapid strides will be possible since each sample will be analyzed even before it is removed from the ultrahigh vacuum environment.
