The proposed research, a collaboration between MIT and Raytheon Research Laboratories, is aimed at applying focused ion beam implantation to high performance GaAs integrated circuits. Since microwave and millimeter wave monolithic circuits (MMIC's) often have a variety of high performance devices on each chip, we will particularly focus on this class of circuits. The research will have three main components: a) integration of the focused ion beam into MMIC fabrication including verification of registration and of equivalence with conventional implantation; b) demonstration of the focused ion beam for prototyping of MMIC's by the implantion of a large variety of doses and energies in one step and; c) fabrication of high performance FET's by special implanted structures, i.e. variation also of the implant geometry within a device; d) implantation of complete MMIC.
