Computer simulation of electronic and optical devices is facilitating the rapid advancement of knowledge in science and engineering. The ability to model devices beforehand permits better use of limited resources and increase the assurance that devices which are fabricated will operate as desired. However, not all important devices are easily simulated on existing device modelling programs. Computer simulation programs for high speed InP/InGaAs p-i-n photodetectors are meager in spite of the importance of these devices to optical fiber communications and to other scientific applications. A simulation program for high speed InP/InGaAs p-i-n photodetectors will be created using finite element methods. The program will be designed to model the DC characteristics, initially, of these devices in any of the three spatial dimensions and lay the groundwork for an extension of the model to AC operation. The model will also permit the use of nontraditional materials in photodetector design. The importance of the work will be enhancement of the ability to perform fast yet innovative research on these devices.
