It is generally believed that increasing the lattice mismatch beyond the point of pseudomorphic growth (thus creating dislocations in the structure) renders the material useless for electronic devices. I am currently investigating the possibility that this belief may not be correct and that in some systems, it may be greatly advantageous to increase the lattice-mismatch past the point of pseudomorphic growth. Currently, I am collaborating with two other Professors one from UW Physics, x-ray diffraction and the other from ASU, Physics, electron microscopy on a long term project to theoretically and experimentally investigate strain relaxation in near- and over-critical thickness InGaAs quantum wells and thin films, as well as in naturally and artificially-graded quantum wells and thin films.
