This research investigates the built-in defects and the dry etching damage introduced in the Si1-xGex films synthesized by various methods, thereby developing a damage free RIE process for strained and unstrained Si1-xGex material. The study will involve both physical characterization involving SEM and TEM and electrical characterization involving I-V, C-V and DLTS measurements. The etch rate of these films will be measured. A few ion implanted Si1-xGex samples will be subjected to electrical characterization. The information from this study will provide significant insight for the process control during the integration of the Si1-xGex films in industrial silicon VLSI fabrication processes.
