WPCf 2 B J d | x MACNormal p 5 X ` h p x (# % '0* , .81 3 5@8 : < : } D 4 P T I. A. 1. a.(1)(a) i) a) T 0 * * . , US X ` h p x (# % '0* , .81 3 5@8 : < : } D 4 P 0 * * . , US , 3 ' 1 MACNormal Zheng 9309438 Visible light emission from porous Si has been a research focus since 1991, when the visible photoluminescence from the electrochemically etched Si was first reported. This discovery was an important scientific breakthrough, because of its potential technological implications. It also raises the fundamental question of light emitting mechanism. Despite the still obscure understanding of porous Si, another Si related compound, siloxene, was found to be porous Si like with visible light emission characteristics. This proposed project is based on the current research activity on porous Si, siloxene and siloxene thin films in our laboratory. We propose to develop new thin film deposition schemes for siloxene thin films and the related light emitting device (LED) structures. The advantage of developing such thin films is to avoid the limitation from the current electrochemical anodization method with porous Si. Ultimately, the LED structure based on the siloxene thin film could be implemented to the large scale flat panel display. ***
