9319885 Rao Al, B, N, and P ion implantation will be performed in both bulk crystals and epitaxial layers of 6h({SYMBOL 97 f "Symbol"})-SiC and 3C({SYMBOL 98 f "Symbol"})-SiC. For each ion, variable energy and variable dose implants will be performed. By analyzing the implant secondary ion mass spectrometry (SIMS) depth profiles in the as-implanted material, the first four moments of the implant depth distribution will be determined at various ion energies. Using these experimentally determined moments, the implant profile will be reconstructed using Pearson-IV distribution and compared with the actual SIMS profiles. Following annealing the redistribution of the implant will be checked by SIMS measurements and then the material will be thoroughly characterized. To obtain high resistance regions required for interdevice isolation, 200 keV O+ compensation implants of various doses, accompanied by isochronal anneals will be tried in both n- and p- SiC of various conductivities. Using the optimum implantation/annealing conditions developed in this work, high-temperature/high-power p-n junction rectifiers, blue LEDs, and JFETs will be made SiC. B and P ion implantations will also be performed into GexSi1-x alloy layers grown on (100) Si for x values in the range 0.1 to 0.4. The implanted material will be annealed in a halogen lamp RTA station and then characterized by using various techniques as mentioned above for SiC. The proposed work will be performed in collaboration with the scientist at Naval Research Laboratory, Oak Ridge National Laboratory, National Institute of Standards and Technology and General Electric Research Center (Schnectady). ***
