9358367 Crook The research performed with this NSF Young Investigator Award involves growth by molecular beam epitaxy (MBE) of novel semiconductor structures for electronic and photonic device applications. One current research program examines the synthesis and properties of interfaces, superlattices, and alloys formed by combing elemental and III-V compound semiconductors. The Young Investigators Award will enhance this program by providing funding for additional experiments to examine the properties of novel materials such as (GaAs)1-x(Si2)x alloys and GaAs/Si short-period superlatties. A research program in planar devices formed by patterning of two-dimensional electron gas structures grown by MBE will be initiated during the period of the award. Interaction with industry will be pursed for research in these areas, as well as on related topics such as reproducible growth conditions for MBE. A course on compound semiconductor devices will be developed and first taught in the Fall of 1993, and other new courses will be developed in subsequent years. ***
