9509800 Cheung The research addresses Plasma Immersion Ion Implantation for (1) buried dielectric (oxide) formation (SIMOX), (2) ion-beam mixing with simultaneous deposition and implantation to form GeSi and GeSiC systems and (3) plasma modeling with 2D effects of plasma lateral nonuniformity and ion-beaming mixing. This research emphasizes subsurface material synthesis where the implantation is not constrained by thermal equilibrium and implanted concentrations greater than solid-solubility can be performed. In addition to buried dielectrics there are variations on the technique to realize buried oxynitride (SMON) and buried semiconductor heterojunctions (Si/SiC/Si). The intent in the plasma modeling area is to relate plasma parameters to electronic device characteristics. ***
