9521901 Kornegay This research program involves the characterization of surface and buried channel MOSFET devices fabricated in SiC - a wide bandgap semiconductor which shows promise for high temperature power and control electronics. The program proposes to examine test patterns to extract device modeling parameters for surface channel SiC devices and ion-implanted SiC buried channel devices. These modeling parameters will be used in modified simulation programs to model analog and digital circuits suitable for high-temperature operation. The program emphasizes the use of enhancement-depletion (ED) technology in SiC and extraction of modeling parameters over an extended temperature range. ***
