9612539 Nathan The objectives of this proposed project are to study the effect of strain on the characteristics of electronic devices made from III-V semiconductor heterostrutures, and to explore possible applications of these effects. We wil study both band structure effects and piezoelectric effects in heterostructure devices such as (interband) resonant tunneling diodes and n- and p-channel field effect transistors. Our goal will be to reach a new level of understanding that will lead to novel microsensor concepts. ***
