WPC< 2 B J Z Courier #| x ._ x 6 X @ `7 X @ HP LaserJet 4 HPLAS4.PRS x @ X @ 2 6 V > Z Courier ? x x x , ._ x 6 X @ `7 X @ HP LaserJet 4 HPLAS4.PRS x @ X @ 2 * F Z : #| x INT 9217997 Tu This award supports a two year continuing grant under the NSF CGP (Center for Global Partnership) Science Fellowship Program for Professor Charles W. Tu, Department of Electrical and Computer Engineering, University of California, San Diego. During two three month visits to Japan in 1993 and 1994, Professor Tu will work with Dr. Yunosuke Makita, Optoelectronics Division, Electrotechnical Laboratory (ETL), The Agency of Industrial Science and Technology, MITI, located in Tsukuba Science City. The focus of this project will be in growing Inx Ga1 xAs by molecular beam epitaxy (MBE) with in situ carbon ion implantation for a wide range of composition x on GaAs and InP substrates. Carbon doped Inx Ga1 xAs is important as a base layer in hererojunction bipolar transistors (HBT) because carbon has a much lower diffusivity than other commonly used p type dopants, making a thin base with extremely high doping concentration possible for high performance HBT's. Carbon ion implantation may be an effective method of introducing active carbon dopants into the films, as compared to some of the other techniques. The combined ion beam MBE system at ETL offers a unique opportunity to investigate this scientifically interesting and technologically important materials problem. Extensive charactrization, including structural, electrical, and optical measurements and some device fabrication, will be performed both at ETL and at the Un iversity of California, San Diego.
