This Small Business Innovation Research Phase I project deals with development of a low-cost manufacturing process for high-efficiency patterned sapphire substrates for cheaper and more energy-efficient light emitting diodes (LEDs). Patterned sapphire substrates have been found to improve the quality of gallium nitride epi-layers and enhance the light extraction efficiency of LED devices. The project will focus on the development of a novel high-efficiency patterned sapphire substrate by employing a unique planarization technology. Such a substrate is expected to lead to improved film growth and enhanced light extraction efficiency, while at the same time reducing manufacturing costs. The feasibility of this technology will be demonstrated in Phase I, with Phase II focused on scale-up and manufacturability issues for rapid commercialization of this technology.
The broader impact/commercial potential of this project lie in its ability to increase the efficiency and reduce the cost of solid state lighting products. LED-based solid state lighting devices, because of their potentially very high efficiency, are expected to begin to supplant the inefficient incandescent and fluorescent lamps which are dominant today. Lighting consumes over 20% of the total electricity generated in the US and nearly 30% of electricity used in commercial and residential buildings. The technology to be developed in this project would increase the efficiency and reduce the price of high-brightness LEDs, making them more competitive with fluorescent and incandescent lamps. Finally, domestic manufacturing of low-cost patterned sapphire substrates will result in the creation of high-paying manufacturing jobs in the US.
Lighting consumes >20% of the total electricity generated in the United States and nearly 30% of electricity used in commercial and residential buildings. Light emitting diodes based solid state lighting devices, because of its potentially very high efficiency are considered the ultimate lamps of future. The goal of this Phase I project was to develop a novel high efficiency patterned sapphire substrate for fabrication of ultra-high brightness light emitting diodes. Patterned sapphire substrates are used by many manufacturers worldwide for fabrication of light emitting diodes since it improves the quality of gallium nitride epitaxial layer and enhances the light extraction efficiency. Sinmat’s technology would further increase the efficiency and reduce the price of high brightness light emitting diodes making it more competitive to compact fluorescent and incandescent lamps thus bringing tremendous environmental and energy benefits. Sinmat successfully fabricated high efficiency patterned sapphire substrates up to 4 inch in diameter, using its novel planarization based technology. Sinmat demonstrated growth of gallium nitride epitaxial layer which is used as light emitting layer, with similar morphology, defect density and enhanced efficiency as grown on conventional substrates. Sinmat has filed a patent application with United States patent office to protect its intellectual property and is working with leading companies towards commercialization.
